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28 November 1989 Hydrogenation Of InP Surface By Phosphorus-Added Hydrogen Plasma
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962005
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Hydrogenation of InP surface has been attempted by the glow discharge plasma of hydrogen and phosphine mixture. It is shown by Auger spectroscopy that the use of the phosphorus-added hydrogen plasma suppresses effectively the preferential etching of phosphorus at the InP surface. A mirror surface of InP is maintained after the plasma exposure even at 250°C. It is verified by SIMS analysis that hydrogen with the density higher than 1 x 1018cm -3 diffuses into the bulk InP to 500 nm in depth. Photoluminescence(PL) intensity of the hydrogenated InP surface is increased by a factor of 2. An intentional slow etching and subsequent PL measurement of the hydrogenated surface shows a significant increase in the PL intensity at the hydrogen-treated surface in addition to a moderately enhanced PL intensity over the hydrogen diffused region. Enhancement of the PL intensity over the hydrogen diffused region may relate to the defect passivation. In addition, a significant increase in the PL intensity at the surface is explained in terms of the band bending at the surface possibly due to an introduction of phosphorus vacancies.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Sugino, Aniroot Boonyasirikool, Hiroshi Hashimoto, and Junji Shirafuji "Hydrogenation Of InP Surface By Phosphorus-Added Hydrogen Plasma", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962005
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