28 November 1989 InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962027
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
This paper discusses the development of InP based Charge-Coupled Device addressed Multi-Quantum Well Spatial Light Modulators. These devices are based on the quantum-confined Stark effect and promise to be very fast, with response times in the fractional nsec range.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Y. Han, C. W. Chen, J. H. Quigley, M. Hafich, G. Y. Robinson, R. Chang, D. L. Lile, "InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962027; https://doi.org/10.1117/12.962027
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