28 November 1989 Indium Phosphide-Based Heterojunction Bipolar Transistors.
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962048
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
The Heterojunction Bipolar Transistor (HBT) is not a new device. In the late 1940's W. Shockley1 gave the basic ideas and, about ten years later, H. Kroemer2 published the first paper to show the promising advantages of this new structure. The first device applications have been demonstrated in AlGaAs/GaAs materials, taking advantage of the natural lattice match in this system. Currently, high performance GaAs-based HBTs have been reported and the InP-based transistors are still promising. In this paper we will review the reasons why this device has required more than forty years of development and what its future can be in the InP-based materials systems.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Luc Pelouard, Michael A. Littlejohn, "Indium Phosphide-Based Heterojunction Bipolar Transistors.", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962048; https://doi.org/10.1117/12.962048
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