Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy.

U. K. Chakrabarti; W. S. Hobson; V. Swaminathan; S. J. Pearton; S. Nakahara; M. Lamont Schnoes; P. M. Thomas

doi:10.1117/12.961986

28 November 1989 Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy.

U. K. Chakrabarti, W. S. Hobson, V. Swaminathan, S. J. Pearton, S. Nakahara, M. Lamont Schnoes, P. M. Thomas

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.961986
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Lattice mismatched heteroepitaxy is currently pursued to broaden the material base for integrated optoelectronic devices. We have grown GaAs on InP using atmospheric pressure organometallic vapor phase epitaxy. Specular mirror-like morphology is obtained when a two step pre-layer growth process is adopted. Best morphology is obtained on off-oriented substrates. The films were found to be stoichiometric as studied by Auger electron spectroscopy having a resolution of 0.1 atomic percent. The film-substrate interface, as examined by cross-sectional transmission electron microscopy, revealed a dislocation density =1.3 x 10¹⁰ cm while that near the top surface reduced to 8.4 x 10⁹ cm 2. The =2K photoluminescence spectra of the grown material were found to be dominated by exciton related transitions. Furthermore, we also report the reverse and forward current-voltage characteristics of a Au-GaAs-(e)InP diode structure.

Citation Download Citation

U. K. Chakrabarti, W. S. Hobson, V. Swaminathan, S. J. Pearton, S. Nakahara, M. Lamont Schnoes, and P. M. Thomas "Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy.", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.961986

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