Low Temperature Dielectrics And Surface Passivation Of InP

R. Iyer; Z. Zou; C. W. Wilmsen; D. L. Lile

doi:10.1117/12.962002

28 November 1989 Low Temperature Dielectrics And Surface Passivation Of InP

R. Iyer, Z. Zou, C. W. Wilmsen, D. L. Lile

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962002
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Low temperature Silicon Dioxide, deposited on InP at temperatures as low as 120°C, shows improved interfacial quality as judged by quasi-static and high frequency CV measurements. These films are highly resistive and have potential applications in a MISFET technology. Results with sulfur and selenium passivation prior to deposition of SiO2 at higher temperatures show similarly improved interfaces on InP.

Citation Download Citation

R. Iyer, Z. Zou, C. W. Wilmsen, and D. L. Lile "Low Temperature Dielectrics And Surface Passivation Of InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962002

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available