28 November 1989 Low Temperature Dielectrics And Surface Passivation Of InP
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989); doi: 10.1117/12.962002
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Low temperature Silicon Dioxide, deposited on InP at temperatures as low as 120°C, shows improved interfacial quality as judged by quasi-static and high frequency CV measurements. These films are highly resistive and have potential applications in a MISFET technology. Results with sulfur and selenium passivation prior to deposition of SiO2 at higher temperatures show similarly improved interfaces on InP.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Iyer, Z. Zou, C. W. Wilmsen, D. L. Lile, "Low Temperature Dielectrics And Surface Passivation Of InP", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962002; https://doi.org/10.1117/12.962002
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