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28 November 1989 MIS Structures On InP Using Oxide Deposited Near 100°C
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962006
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
We have deposited silicon dioxide by chemical vapor deposition at pressures of 2 to 12 torr and substrate temperatures as low as 75°C. Properties of the films on n-type InP substrates are reported. Hysteresis of less than 0.1 volts is observed in capacitance-voltage curves for the lowest-temperature depositions. For 100°C depositions surface state densities are in the low 1011 cm-2eV-1 range. Changes in the dielectric properties are observed as deposition temperature drops from 300 to 75°C. Relative dielectric constant increases from 4 to 7 and resistivity decreases from 1015 to 1012 ohm-cm. Electrical properties can be further improved by both RTA and conventional furnace annealing.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Vaccaro, B. R. Bennett, J. P. Lorenzo, A. Davis, and H. G. Lipson "MIS Structures On InP Using Oxide Deposited Near 100°C", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962006
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