28 November 1989 Monte Carlo Simulation Of A Submicron Pseudomorphic GaA1As/InGaAs/GaAs HEMT
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962050
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
We present a first principles theoretical analysis of the performance of a 0.35 μn Al0.15 Ga0.85 As/InO.15Ga0.85As pseudomorphic high electron mobility transistor (HEMT) based on an ensemble Monte Carlo simulation coupled with a two-dimensional Poisson solver. The model contains the full details of the two-dimensional electron gas, nonstationary transport, i.e. ballistic transport and velocity overshoot, real space transfer, and the effects of the two-dimensional electric field profile. In order to ensure the reliability of the model, it is carefully tested throughout each stage of its development to experimental data or other independent calculations. Finally, the model calculations are compared to experimental measurements for a comparable device, Excellent agreement between the calculated and experimentally measured current-voltage characteristic is found. From an analysis of the underlying transport physics, the high speed performance of the pseudomorphic HEMT is found to arise from the superior electron confinement properties within the channel layer.
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Duke H. Park, Kevin F. Brennan, "Monte Carlo Simulation Of A Submicron Pseudomorphic GaA1As/InGaAs/GaAs HEMT", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962050; https://doi.org/10.1117/12.962050
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