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28 November 1989 New LED In Synthesized InP : Yb Material
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962031
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
New light emitting diodes at 1.00 μm obtained from synthesized InP : Yb bulk crystal are studied. The n-type Yb doped bulk material was grown by gradient freeze method. Mg+ ions were implanted in this material for p-type layer. The indepth localization of the junction is not critical. Photoluminescence and electroluminescence spectra are performed from 77 K to 300 K. Two peaks are observed : band edge emission (0.88 pm) and intra shell 4f-4f for Yb ions. The variation of EL intensity with diode forward current shows a Yb3+ emission about 40 times higher than band edge emission. No influence of temperature is observed on Yb3+ peak linewidth and wavelength.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. L'Haridon, D. Moutonnet, Y. Toudic, M. Salvi, and P. N. Favennec "New LED In Synthesized InP : Yb Material", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962031
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