Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To Inp-Based Photonic Devices

A. Katz; S. N. G. Chu; P. M. Thomas; W. C. Dautremont-Smith

doi:10.1117/12.962017

28 November 1989 Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To InP-Based Photonic Devices

A. Katz, S. N. G. Chu, P. M. Thomas, W. C. Dautremont-Smith

Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962017
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States

Abstract

Pt/Ti low resistance non-alloyed ohmic contacts to p-InP-based contact layers in photonic devices, which were formed by rapid thermal processing (RTP), were studied. E-gun evaporated Pt/Ti metallization deposited onto 1.5 •10¹⁹ cm^-3 Zn doped In0.53Ga0.47As yielded the best electrical performance. These contacts were ohmic as deposited with a specific contact resistance value of 3.0•10-4Ωcm2. RTP at higher temperatures led to decrease of the specific contact resistance to 3.4 •10-8Ωcm2 (0.08Ωmm) as a result of heating at 450°C for 30 sec. This heat treatment caused only a limited interfacial reaction (about 20 nm thick) between the Ti and the InGaAs, resulted in a thermally stable contact and induced tensile stress of 5.6• 10⁹ dyne •cm -2 at the metal layer but without degrading the adhesion. Heating at temperatures higher than 500°C resulted in an extensive interaction and degradation of the contact.

Citation Download Citation

A. Katz, S. N. G. Chu, P. M. Thomas, and W. C. Dautremont-Smith "Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To InP-Based Photonic Devices", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962017

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