28 November 1989 Radiation Effects On InP-Based Electrical & Optical Devices
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962053
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
Radiation effects on InP-based electrical and optical devices are discussed from the standpoint of device structure and physics. The devices addressed are High Electron Mobility Transistor (HEMT), Heterojunction Bipolar Transistor (HBT), and solar cells. Radiation effects due to neutrons, gamma rays, electrons, protons, x rays, and total dose radiation can result in device parameter degradation, upset, burnout, and current leakage problems. The effects are correlated to device structure and material properties. Comparisons are made to GaAs or Si devices that have performance characteristics similar to the above-mentioned InP devices. Finally, recommendations are made for testing and modeling these effects.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. N. Vu, J. Y. Yaung, "Radiation Effects On InP-Based Electrical & Optical Devices", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); doi: 10.1117/12.962053; https://doi.org/10.1117/12.962053
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