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28 November 1989 Sensitivity Of Optoelectronic Receivers
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Proceedings Volume 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices; (1989) https://doi.org/10.1117/12.962029
Event: First International Conference on Indium Phosphide and Related Material for Advanced Electronic and Optical Devices, 1989, Norman, OK, United States
Abstract
The formula used to predict wide-band noise of optoelectronic receivers has been modified to account for parasitic resistances in the transistor connected to the photodiode. The new formula leaves the total noise unchanged after proper steps have been taken to adjust the transistor gate width for minimum noise. The discrepancy between measured and predicted noise of 1.65 μm monolithic InP receivers thus remains largely unexplained.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. R. Zeisse "Sensitivity Of Optoelectronic Receivers", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962029
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