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We have demonstrated for the first time a wide-wavelength InGaAs/InP PIN photodiode for optical communication systems working area the 0.7 to 1.55 um wavelength region. The diode has a planar structure with InP/InGaAs/InP double-hetero epitaxial wafer grown by chloride VPE. To obtain high-sensitivity to 0.7 um wavelength light, it has a very thin InP cap layer (0.06 um) and a shallow p-n junction (0.27 um) is formed in the InGaAs layer. Quantum efficiencies for 0.78 um and 1.3 um wavelengths are 76% and 81%, respectively. Dark current and capacitance are as low as 30 pA and 0.53 pF at 5V. Frequency response is flat up to 1 GHz over 5V at 0.78 um.
S. Kagawa,K. Inoue,I Ogawa,Y. Takada, andT. Shibata
"Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive From 0.7 To 1.55 um", Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962026
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S. Kagawa, K. Inoue, I Ogawa, Y. Takada, T. Shibata, "Wide-Wavelength InQaAs/InP PIN Photodiodes Sensitive From 0.7 To 1.55 um," Proc. SPIE 1144, 1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices, (28 November 1989); https://doi.org/10.1117/12.962026