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1 December 1989 Accurate Determination Of The Spin-Orbit Splitting Of The Valence Bands Of Silicon By Means Of Fourier Transform Photothermal Ionization Spectroscopy (FT-PTIS)
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Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969558
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States
Abstract
By use of the FT-PTIS technique, the transitions from the ground state of boron to its excited states associated with the p3/2 valence band as well as to those associated with the p1/2 valence band have been observed for ultrapure silicon. According to the positions of 2p', 3p' and 4p' lines, and considering the nonparabolicity of the P1/2 band, the ionization energy of boron to the p1/2 band was deduced as EI(boron) = 88.45± 0.01 meV with high accuracy and without doping broadening of the line width. From the ionization energy of boron to the P3/2 band determined as E1(boron) = 45.83 ± 0.01 meV, the spin-orbit splitting of the valence bands in silicon has been determined to be Δo(Si) = 42.62 ± 0.01 meV, which seems to be the most accurate one so far.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Shen, Zhiyi Yu, and Y. X. Huang "Accurate Determination Of The Spin-Orbit Splitting Of The Valence Bands Of Silicon By Means Of Fourier Transform Photothermal Ionization Spectroscopy (FT-PTIS)", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); https://doi.org/10.1117/12.969558
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