Fourier Transform Infrared (FTIR) Determination Of Interstitial Oxygen Concentration Of Single-Side-Polished Silicon Wafers

Brian Rennex

doi:10.1117/12.969486

1 December 1989 Fourier Transform Infrared (FTIR) Determination Of Interstitial Oxygen Concentration Of Single-Side-Polished Silicon Wafers

Brian Rennex

Author Affiliations +

Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969486
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States

Abstract

This paper evaluates a new algorithm developed by the author for calculating interstitial oxygen concentration in silicon wafers, using infrared transmission data. These silicon wafers have an unpolished side and are referred to as being single-side-polished (SSP). This evaluation is carried out for various "unpolished" surface types, which are representative of etched or backside-damaged surfaces used by the integrated circuit industry. In general, accurate measurement of oxygen content is necessary for improvement of quality control in the manufacture of integrated circuits, and this quality control is more reliable and less costly if this measurement can be done on SSP wafers.

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Brian Rennex "Fourier Transform Infrared (FTIR) Determination Of Interstitial Oxygen Concentration Of Single-Side-Polished Silicon Wafers", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); https://doi.org/10.1117/12.969486

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