1 December 1989 Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence
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Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969643
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States
The radiometic calibration of a Fourier transform spectrometer has been carried out with relation to semiconductor photoluminescence. The technique employed made use of a calibrated source of spectral irradiance and a diffuse reflector of known spectral reflectance. To obtain the instrumental calibration from 700 meV to 1500 meV (5600 to 12000 cm-1), the luminescent material was replaced by the illuminated diffuser and its spectrum was measured. An example is given of the photoluminescence of a silicon film grown by molecular beam epitaxy (MBE) with in situa ion beam doping (IBD) of Ask+-ions. The spectra before and after the application of the radiometric correction are compared over the range 740 to 1160 meV.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. L. Rowell, N. L. Rowell, } "Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); doi: 10.1117/12.969643; https://doi.org/10.1117/12.969643

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