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1 December 1989 Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence
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Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989)
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States
The radiometic calibration of a Fourier transform spectrometer has been carried out with relation to semiconductor photoluminescence. The technique employed made use of a calibrated source of spectral irradiance and a diffuse reflector of known spectral reflectance. To obtain the instrumental calibration from 700 meV to 1500 meV (5600 to 12000 cm-1), the luminescent material was replaced by the illuminated diffuser and its spectrum was measured. An example is given of the photoluminescence of a silicon film grown by molecular beam epitaxy (MBE) with in situa ion beam doping (IBD) of Ask+-ions. The spectra before and after the application of the radiometric correction are compared over the range 740 to 1160 meV.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. L. Rowell "Radiometric Calibration Of Fourier Transform Semiconductor Photoluminescence", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989);


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