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17 April 2020 Enhancing near-infrared photoresponse in sulfur-supersaturated silicon photodiodes
Wei Li, Teng Fei Wu
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Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114550R (2020) https://doi.org/10.1117/12.2559669
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
We demonstrate an enhancing near-infrared photoresponse in sulfur-supersaturated silicon photodiodes. We obtain microstructured silicon doped with supersaturated sulfur by femtosecond laser ablation in SF6 atmosphere. Next, we introduce annealing process to activate the dopants and improve the material quality. Then we fabricate n+ n photodiodes using the microstructured silicon. We find that the spectral response of the photodiodes exhibits gain from 400 nm to 1200 nm under the reverse bias, and under the condition of 10 V reverse bias, the photoresponse can be up to 3.69 A/W and 2.45 A/W at the wavelength of 965 nm and 1064 nm, respectively. While for the ordinary silicon photodiode, the spectral response has no gain under the reverse bias, and the photoresponse is less than 0.7 A/W and 0.35 A/W at 965 nm and 1064 nm, respectively. Our results suggest that the sulfur-supersaturated silicon diode has the great potential to improve the performance of silicon detectors in the infrared range.
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Wei Li and Teng Fei Wu "Enhancing near-infrared photoresponse in sulfur-supersaturated silicon photodiodes", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114550R (17 April 2020); https://doi.org/10.1117/12.2559669
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KEYWORDS
Silicon
Annealing
Photodiodes
Absorption
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