Generation of high-order orbital angular momentum modes with a double-trench SOI waveguide

Xiuli Bai; Heming Chen

doi:10.1117/12.2565049

17 April 2020 Generation of high-order orbital angular momentum modes with a double-trench SOI waveguide

Xiuli Bai, Heming Chen

Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 1145557 (2020) https://doi.org/10.1117/12.2565049
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China

Abstract

A double-trench silicon waveguide based on SOI chip is proposed to generate high-order OAM modes (OAM_±2). The double-trench structure excites two high-order orthogonal modes with π/2 (or 3π/2) phase difference, and can couple into high-order OAM_±2 modes at the output terminal. The FDTD simulation results show that the mode conversion efficiency is greater than 95% and the intersection loss is less than 0.22dB during the wavelength range of 1.3 μm to 1.8 μm. The proposed method to generate OAM beams in SOI waveguide would be interesting for on-chip integrated optical communication, optical trapping and quantum information processing.

Citation Download Citation

Xiuli Bai and Heming Chen "Generation of high-order orbital angular momentum modes with a double-trench SOI waveguide", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145557 (17 April 2020); https://doi.org/10.1117/12.2565049

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KEYWORDS

Waveguides

Silicon

Multiplexing

Optical communications

Wave propagation

Quantum information processing

Telecommunications

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