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17 April 2020 Simulation research on scattering characteristics of incident electron under uniform doping of EBCMOS substrate
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Abstract
According to the interaction model between low-energy electrons and solids, combined with Monte Carlo calculation method, MATLAB software was used to simulate the electron scattering trajectories of a large number of photoelectrons incident on EBCMOS substrates. The energy loss rate of different incident photoelectrons on the substrate was analyzed. The influence of electron incidence depth and the range of electron motion. When the incident photoelectron energy increases, the energy loss rate gradually decreases, and the electron incident depth and the electron motion range increase. The simulation results can provide reference and basis for the design and preparation of the back-illuminated CMOS device substrate.
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Wei Wang, Ye Li, De Song, and Xulei Qin "Simulation research on scattering characteristics of incident electron under uniform doping of EBCMOS substrate", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114556K (17 April 2020); https://doi.org/10.1117/12.2565274
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