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17 April 2020 Ultra-thin benzocyclobutene bonding of InGaAs PIN photodetector onto silicon photonic chip
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Abstract
Ultro-thin benzocyclobutene(BCB)bonding process has been proposed as a solution of InGaAs/Si optoelectronic heterogeneous integration. Here, we present a process of InGaAs PIN photodetector bonding onto silicon photonic chip, an ultra-thin bonding layer below 400nm is applied. Silicon photonic chip was fabricated by CMOS compatible process. In order to importing and exporting the light, a focal grating coupler was designed and fabricated, and fiber-to-chip efficiency was 37.7%. InGaAs PIN photodetector responsivity was 0.95A/W which taped out on 3 inch standard InP process. The result presented that the responsivity deterioration coefficient was below 1dB, and the coupling efficiency from Si waveguide to InGaAs photodetector was 41.8%.
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Yan Wang, Dongchen Wang, Pengxiao Xu, Guanghua Tang, Guoqing You, and Yuechan Kong "Ultra-thin benzocyclobutene bonding of InGaAs PIN photodetector onto silicon photonic chip", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 1145573 (17 April 2020); https://doi.org/10.1117/12.2565318
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