Translator Disclaimer
Paper
17 April 2020 The impact of quenching resistor on single photon detection performance of 4H-SiC APD
Author Affiliations +
Proceedings Volume 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications; 114557G (2020) https://doi.org/10.1117/12.2565350
Event: Sixth Symposium on Novel Photoelectronic Detection Technology and Application, 2019, Beijing, China
Abstract
In this letter, an avalanche photodiode (APD) for ultraviolet detection was fabricated on a 4H-SiC epi-layer with a radius of 150 µm. By adopting passive quenching method, the impact of quenching resistor on single photon detection performance of the fabricated APD was investigated for the first time. It is found that both dark count rate (DCR) and single photon detect efficiency (SPDE) were reduced with the increasing quenching resistance. When the DCR fixed at 5 Hz/μm2 , the SPDE is 7.1% /6.7%/5.4%/5.2% corresponding to the quenching resistance of 10/20/50/100 kΩ. Variation of the SPDEs can be ascribed to the changing death time by comparing the photon counting spectra with various resistors. The obtained results have built up a good basis for the design of SiC APD single photon detection.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Tan, Xingye Zhou, Yuanjie Lv, Yuangang Wang, Shixiong Liang, and Zhihong Feng "The impact of quenching resistor on single photon detection performance of 4H-SiC APD", Proc. SPIE 11455, Sixth Symposium on Novel Optoelectronic Detection Technology and Applications, 114557G (17 April 2020); https://doi.org/10.1117/12.2565350
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top