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9 April 2020 Study of dielectric properties of resistive thin-film coatings based on silicon nitride compositions
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Proceedings Volume 11458, Saratov Fall Meeting 2019: Laser Physics, Photonic Technologies, and Molecular Modeling; 1145810 (2020) https://doi.org/10.1117/12.2564419
Event: Saratov Fall Meeting 2019: VII International Symposium on Optics and Biophotonics, 2019, Saratov, Russian Federation
Abstract
We consider the results of dielectric properties study in millimeter band of thin-films based on silicon nitride compositions. Silicon nitride thin-film coatings were deposited on a substrate by DC magnetron sputtering. As a substrate for silicon nitride thin-film coatings a quartz plate were utilized. The ratio of argon and nitrogen in the working gas mixture was chosen as the variable parameter to control the composition of the deposited thin-film coating. Several samples of silicon nitride thin-film coatings with about 1 um thickness were fabricated. Radiophysical and dielectric properties of the fabricated SiN-type thin-film coatings were studied in millimeter wave frequency band of 50-70 GHz (V-band) with help of free space measurement method. The obtained results have shown that by controlling the resistive thin-film coating composition one can only slightly vary the radiophysical and dielectric properties of coating in millimeter-band.
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Andrey V. Starodubov, Alexey A. Serdobintsev, Ilya O. Kozhevnikov, Anton M. Pavlov, Viktor V. Galushka, and Stanislav A. Makarkin "Study of dielectric properties of resistive thin-film coatings based on silicon nitride compositions", Proc. SPIE 11458, Saratov Fall Meeting 2019: Laser Physics, Photonic Technologies, and Molecular Modeling, 1145810 (9 April 2020); https://doi.org/10.1117/12.2564419
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