A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH4/O2 in H2, CO in H2' and CH4/CO2 in H2 plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to 0 atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:0 ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.
D. E. Meyer,
T. B. Kustka,
R. O. Dillon,
J. A. Woollam,
"R.F. Plasma CVD Of Diamond From Oxygen Containing Gases", Proc. SPIE 1146, Diamond Optics II, (15 January 1989); doi: 10.1117/12.962058; https://doi.org/10.1117/12.962058