15 January 1989 R.F. Plasma CVD Of Diamond From Oxygen Containing Gases
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Abstract
A 13.56 MHz inductively coupled plasma system has been used to deposit diamond from CH4/O2 in H2, CO in H2' and CH4/CO2 in H2 plasmas. Depositions were made on substrates of silicon and quartz with surfaces modified by scratching, or coated with Diamond-Like Carbon (DLC), or left unmodified. The C atom to 0 atom ratio was systematically varied as well as the total concentration. Polycrystalline films, faceted particles and spherical particles were deposited. We found that a C:0 ratio of 1:1 with a total concentration between 2% and 3% in hydrogen resulted in large area polycrystalline films for the deposition parameters investigated.
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D. E. Meyer, D. E. Meyer, T. B. Kustka, T. B. Kustka, R. O. Dillon, R. O. Dillon, J. A. Woollam, J. A. Woollam, } "R.F. Plasma CVD Of Diamond From Oxygen Containing Gases", Proc. SPIE 1146, Diamond Optics II, (15 January 1989); doi: 10.1117/12.962058; https://doi.org/10.1117/12.962058
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