Spatially resolved Raman and photoluminescence studies of two-dimensional materials and devices

Heesuk Rho

doi:10.1117/12.2567566

21 August 2020 Spatially resolved Raman and photoluminescence studies of two-dimensional materials and devices

Heesuk Rho

Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 1146505 (2020) https://doi.org/10.1117/12.2567566
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Raman scattering and photoluminescence measurements are useful to investigate spatially-resolved energy landscapes in two-dimensional layered structures. For example, charge transfer and electronic properties can be explored by optical phonons and excitons in various layered structures. Particularly, simultaneous Raman and photoluminescence imaging over a large area of two-dimensional surface can provide quantitative information on doping distribution. Further, in situ Raman imaging of operating field-effect transistor can be utilized to understand energy dissipation mechanism over an entire transport channel. [This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Grant No. 2019R1A2C1003366).]

Conference Presentation

Citation Download Citation

Heesuk Rho "Spatially resolved Raman and photoluminescence studies of two-dimensional materials and devices", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146505 (21 August 2020); https://doi.org/10.1117/12.2567566

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