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21 August 2020 Quantitative determination of nanoscale strain in in 2D semiconductors using hyperspectral nano-optical imaging
P. James Schuck
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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 1146506 (2020) https://doi.org/10.1117/12.2568224
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
We demonstrated a facile recipe using nano-optical and topographical measurements to estimate nanoscale strain in 2D materials. This method is generally applicable to nanostrained regions of arbitrary shape and can be easily applied to complex fields of interacting nanobubbles. Using state of the art nano-optical characterization tools, we show that the photoluminescence energy shift agrees with the estimated strain of single non-circular nanobubble. By combining the simultaneously solved strain maps of dozens of irregular nanobubbles, we reproduce the Grüneisen parameter of the in-plane Raman active mode for the 1L-WS2, showing the quantitative accuracy of our method for truly “nano” nanobubbles with radii on order 10-100 nm.
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P. James Schuck "Quantitative determination of nanoscale strain in in 2D semiconductors using hyperspectral nano-optical imaging", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146506 (21 August 2020); https://doi.org/10.1117/12.2568224
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KEYWORDS
Hyperspectral imaging
Semiconductors
Luminescence
Raman spectroscopy
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