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21 August 2020 Study on electronic and optical properties of GaN nanostructure arrays
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Abstract
The simulation models of gallium nitride (GaN) nanostructure arrays are designed by COMSOL Multiphysics software package based on finite element method (FEM). The effects of changes of GaN nanowires in axial geometry on photoelectron concentration distributions performance are analyzed. And the absorptivity differences of nanorods, truncated-cones and inverted-pencil structures in ultraviolet band are studied. Analysis of simulation results pointed out that both truncated-corn arrays and inverted-pencil arrays have the ability of boosting light absorption compared to nanorod arrays. Thus, such positive conclusion of the axial structure changed GaN nanowires would offer new references for the photoemission layer design of the photocathode.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaodong Guo, Lei Liu, and Xingyue Zhangyang "Study on electronic and optical properties of GaN nanostructure arrays", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146508 (21 August 2020); https://doi.org/10.1117/12.2572354
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