Valley-based directional emission controlled by plasmonic nanostructure​

Jingshi Yan; Tobias Bucher; Haitao Chen; Khosro Zangeneh Kamali; Emad Najafidehaghani; Antony George; Mohsen Rahmani; Andrey Turchanin; Isabelle Staude; Dragomir Neshev; Mostafa Abasifard

doi:10.1117/12.2568272

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21 August 2020 Valley-based directional emission controlled by plasmonic nanostructure

Jingshi Yan, Tobias Bucher, Haitao Chen, Khosro Zangeneh Kamali, Emad Najafidehaghani, Antony George, Mohsen Rahmani, Andrey Turchanin, Isabelle Staude, Dragomir Neshev, Mostafa Abasifard

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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 1146517 (2020) https://doi.org/10.1117/12.2568272
Event: SPIE Nanoscience + Engineering, 2020, Online Only

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Abstract

Two-dimensional semiconductors such as monolayer transition metal dichalcogenides (TMDs) exhibits remarkable optical properties such as robust valley polarization, making them ideal for optoelectronic and valleytronic devices. Manipulating the valley polarization by optical method is the key to realize valleytronic devices. Here, we demonstrate a resonant plasmonic nanostructure designed to spatially separate the emissions from different valleys of the WSe2 monolayer at cryogenic temperature. By changing the helicity of excitation, we show the directionality control of valley-based emission. Our hybrid nanostructure exhibits the possibility to realise the valleytronic devices.

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Jingshi Yan, Tobias Bucher, Haitao Chen, Khosro Zangeneh Kamali, Emad Najafidehaghani, Antony George, Mohsen Rahmani, Andrey Turchanin, Isabelle Staude, Dragomir Neshev, and Mostafa Abasifard "Valley-based directional emission controlled by plasmonic nanostructure", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146517 (21 August 2020); https://doi.org/10.1117/12.2568272

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