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28 August 2020 Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser
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(110)-oriented GaAs-based quantum wells (QWs) are promising active layers of spin lasers because of long spin relaxation time at room temperature. So far, (110)GaAs/AlGaAs QWs have been investigated intensively and long carrier lifetime of several ns has been reported. In contrast, there have been few reports on the crystal growth of (110)InGaAs/(Al)GaAs QWs despite its great potential to the active layer, resulting in rather poor crystal quality with short carrier lifetime. In this study, we tried to grow high-quality (110)InGaAs/(Al)GaAs QWs by optimizing MBE growth conditions and obtained long carrier and spin lifetime (>1 ns) in the QWs grown with relatively high temperature and As/Ga flux ratio. This reveals that the (110)InGaAs/(Al)GaAs QWs are applicable to the active layer of spin lasers. In addition, we propose a novel structure for a spin transport layer between the ferromagnetic electrode (spin injector) and the active layer of spin laser.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Iba, Hidekazu Saito, and Yuzo Ohno "Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser", Proc. SPIE 11470, Spintronics XIII, 114702P (28 August 2020);

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