Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors

Michael Geiger; R. Thomas Weitz; Guido Schmitz; Hagen Klauk; Rachana Acharya

doi:10.1117/12.2568458

22 August 2020 Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors

Michael Geiger, R. Thomas Weitz, Guido Schmitz, Hagen Klauk, Rachana Acharya

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Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 114760F (2020) https://doi.org/10.1117/12.2568458
Event: SPIE Organic Photonics + Electronics, 2020, Online Only

Abstract

Ultrathin hybrid gate dielectrics composed of an inorganic metal oxide and an organic self-assembled monolayer are useful for low-voltage organic thin-film transistors by providing a large gate dielectric capacitance and minimizing gate leakage. In this work, we focus on the role of the thin metal oxide in the hybrid gate dielectric, by investigating a plasma-grown aluminum oxide and the effects of the plasma power and duration on the growth of the aluminum oxide and the resulting properties of the gate dielectric in organic TFTs.

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Michael Geiger, R. Thomas Weitz, Guido Schmitz, Hagen Klauk, and Rachana Acharya "Tuning the properties of ultrathin oxygen-plasma-grown aluminum oxide films for high-capacitance hybrid gate dielectrics in organic thin-film transistors", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760F (22 August 2020); https://doi.org/10.1117/12.2568458

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