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22 August 2020 Real-time monitoring of charge carrier traps leads to stable and high-performance organic field-effect transistors
Hamna Haneef, Qianxiang Ai, Chad Risko, John Anthony, Oana Jurchescu
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Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 114760S (2020) https://doi.org/10.1117/12.2568009
Event: SPIE Organic Photonics + Electronics, 2020, Online Only
Abstract
We use organic field-effect transistor (OFET) measurements to perform a systematic study of the generation/annihilation of traps in organic semiconductors deliberately exposed to different stimuli. The first study involves the generation of a deep trap during repetitive transistor operation in ambient. The second study focuses on the dynamics of traps due to changes induced in the film microstructure in small molecule OFETs during exposure to solvents. Lastly, water-related traps in polymer films are investigated via real-time monitoring of the trap DOS spectrum during removal of water using a desiccant. A discrete peak responsible for threshold voltage instabilities was established upon removal of water from the SiO2 surface. The trap DOS spectrum provided a solid platform to understand the dynamics of trap formation/annihilation, which led to complete suppression of the discrete peak through a new surface passivation route that led to a remarkable enhancement in device performance.
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Hamna Haneef, Qianxiang Ai, Chad Risko, John Anthony, and Oana Jurchescu "Real-time monitoring of charge carrier traps leads to stable and high-performance organic field-effect transistors", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760S (22 August 2020); https://doi.org/10.1117/12.2568009
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KEYWORDS
Transistors
Field effect transistors
Silica
Dielectrics
Molecules
Optoelectronic devices
Organic semiconductors
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