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20 August 2020 Comparison of the high-frequency performance of staggered and coplanar organic thin-film transistors using two-port network analysis
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Abstract
The choice of a staggered or coplanar geometry for organic thin-film transistors (TFT) has significant effects on the static and dynamic electronic properties of the transistors. Using two-port network analysis, we find that the parasitic capacitances and thus the unity current-gain (transit) frequencies are significantly more dependent on the gate-to-source overlap in the staggered TFTs than in coplanar TFTs, and that the transit frequency is higher overall when a coplanar geometry is implemented. We show that these differences are primarily attributed to the lower contact resistance in the coplanar TFTs (10 Ohm-cm) as well as smaller parasitic capacitances associated with the gate-to-contact overlaps.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James W. Borchert, Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs, and Hagen Klauk "Comparison of the high-frequency performance of staggered and coplanar organic thin-film transistors using two-port network analysis", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760U (20 August 2020); https://doi.org/10.1117/12.2567978
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