Charge Transport Enhanced Optical Nonlinearities In Semiconductors

Alan Kost; Elsa Garmire; Tom Hasenberg

doi:10.1117/12.962153

4 January 1990 Charge Transport Enhanced Optical Nonlinearities In Semiconductors

Alan Kost, Elsa Garmire, Tom Hasenberg

Proceedings Volume 1148, Nonlinear Optical Properties of Materials; (1990) https://doi.org/10.1117/12.962153
Event: 33rd Annual Technical Symposium, 1989, San Diego, United States

Abstract

Low power nonlinear optical materials are needed for devices such as all-optical spatial light modulators and optical wave mixers (devices which couple energy between two or more optical beams). In particular, operating intensities of a few milliwatts/cm² are desirable. It is not essential that the response times of the materials be extremely short. By taking advantage of the inherent parallelism of optics, significant information processing can be achieved even if response times are of the order of microseconds. With these requirements in mind, we are studying charge transport enhanced optical nonlinearities in semiconductors. A bonus of this approach is that these materials are compatible with existing semiconductor technologies.

Citation Download Citation

Alan Kost, Elsa Garmire, and Tom Hasenberg "Charge Transport Enhanced Optical Nonlinearities In Semiconductors", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962153

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