4 January 1990 Effects Of Applied Voltage On Holographic Storage In SBN:60
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Abstract
We characterize the holographic storage characteristics of photorefractive SBN:60 (Sr0.6Ba0.4Nb2O6) under an externally applied electric field. The field dependence of the recording response time and sensitivity, gain coefficient, steady-state diffraction efficiency, and erasing response time were measured. Kukhtarev's band transport model is shown to predict the asymmetric erase time / write time behavior of SBN:60. Using these results, we estimate as a function of applied field the number of equal diffraction efficiency holograms which can be superimposed in the crystal.
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Joseph E. Ford, Joseph E. Ford, Yoshinao Taketomi, Yoshinao Taketomi, Sing H. Lee, Sing H. Lee, Daniel Bize, Daniel Bize, R. R. Neurgaonkar, R. R. Neurgaonkar, Shaya Fainman, Shaya Fainman, } "Effects Of Applied Voltage On Holographic Storage In SBN:60", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); doi: 10.1117/12.962139; https://doi.org/10.1117/12.962139
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