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4 January 1990 Low Temperature Pulsed Plasma Deposition Part 4: The Preparation Of Layered Structures Of Amorphous Chalcogenide Glasses With Non-Linear Optical Properties
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Abstract
The pulsed plasma deposition technique described in Part 11 and Part 22 of this series has been used to deposit layered structures of silicon dioxide ( SiO2) and germanium sulphide (GeSx), and layered structures of silicon dioxide and germanium selenide (GeSex). Layer thicknesses down to 25 Å have been deposited, and by analysing the layers using Auger sputter profiling and infrared absorption, it has been demonstrated that the interface between the deposited layers is sharp and distinct. The deposited films have a band gap that is dependent both on the composition of the chalcogenide deposited and the size of the chalcogenide layer. The band gap shifts to higher energy with higher selenium or sulphur concentration in the film and with reduced layer thickness. The shift of the band gap with layer thickness is consistent with a simple quantum-well model. Preliminary results are presented which show the films appear to have high non-linear optical coefficients near the band edge, which leads to induced absorption at high laser intensities.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. P. Llewellyn, G. Scarsbrook, and R. A. Heinecke "Low Temperature Pulsed Plasma Deposition Part 4: The Preparation Of Layered Structures Of Amorphous Chalcogenide Glasses With Non-Linear Optical Properties", Proc. SPIE 1148, Nonlinear Optical Properties of Materials, (4 January 1990); https://doi.org/10.1117/12.962146
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