12 December 1989 Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering
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Abstract
We have achieved the high quality hydrogenated amorphous silicon-germanium (a-SiGe:H) films with high photo-conductivity (σph=10-4S/cm, under AM-1) and high photo-sensitivity (σphd=104) by reactive sputtering. In this paper, we present also the electron spin resonance(ESR)-studies of defects are attributed to Si- and Ge-like dangling bonds of a-SiGe:H films.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guanghua Chen, Guanghua Chen, Jinzhang Xu, Jinzhang Xu, Fangqing Zhang, Fangqing Zhang, } "Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering", Proc. SPIE 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII, (12 December 1989); doi: 10.1117/12.962175; https://doi.org/10.1117/12.962175
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