12 December 1989 Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering
Author Affiliations +
We have achieved the high quality hydrogenated amorphous silicon-germanium (a-SiGe:H) films with high photo-conductivity (σph=10-4S/cm, under AM-1) and high photo-sensitivity (σphd=104) by reactive sputtering. In this paper, we present also the electron spin resonance(ESR)-studies of defects are attributed to Si- and Ge-like dangling bonds of a-SiGe:H films.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guanghua Chen, Guanghua Chen, Jinzhang Xu, Jinzhang Xu, Fangqing Zhang, Fangqing Zhang, } "Characteristics Of Hydrogenated Amorphous Silicon-Germanium Films Prepared By Reactively Sputtering", Proc. SPIE 1149, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VIII, (12 December 1989); doi: 10.1117/12.962175; https://doi.org/10.1117/12.962175


Changes in the photo absorption spectrum of MEH PPV in...
Proceedings of SPIE (December 21 2016)
A Modified Luminescent Solar Concentrator
Proceedings of SPIE (September 24 1986)
Fluorescent Planar Concentrator
Proceedings of SPIE (December 01 1983)
Luminescence and chemical potential of solar cells
Proceedings of SPIE (December 01 1991)

Back to Top