Nanostructure-enabled longer lock-on time GaAs photoconductive semiconductor switches

Ruijia Liu; Chang-Jiang Chen; Annan Shang; Yun Goo Lee; Stuart Yin

doi:10.1117/12.2570747

20 August 2020 Nanostructure-enabled longer lock-on time GaAs photoconductive semiconductor switches

Ruijia Liu, Chang-Jiang Chen, Annan Shang, Yun Goo Lee, Stuart Yin

Proceedings Volume 11498, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV; 114980F (2020) https://doi.org/10.1117/12.2570747
Event: SPIE Optical Engineering + Applications, 2020, Online Only

Abstract

We reported a new type of GaAs photoconductive semiconductor switch (PCSS) with nanostructured surface. Since the light could be entered not only from the top surface but also the side surface of the nanostructures, the effective penetration depth was significantly increased. This resulted in a longer lock-on time, which could be highly useful for a variety of applications that require longer lock-on time.

Conference Presentation

Citation Download Citation

Ruijia Liu, Chang-Jiang Chen, Annan Shang, Yun Goo Lee, and Stuart Yin "Nanostructure-enabled longer lock-on time GaAs photoconductive semiconductor switches", Proc. SPIE 11498, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XIV, 114980F (20 August 2020); https://doi.org/10.1117/12.2570747

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