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11 September 2020 Rapid non-destructive detection of defects in bulk and epitaxially grown GaN
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Abstract
We present an approach for wafer-level rapid multi-modal defect non-destructive imaging of device-relevant GaN defects with high resolution and high sensitivity. The scanning GaN defects detection system is based on laser pump-and-probe photoluminescence and photothermal measurements that are compared to diode device reliability data from accelerated lifetime testing. This work hypothesis is that defects probed at optical frequencies can reliably predict reliability or performance issues of power electronic devices at near DC frequencies. Imaging, growth, and device data are correlated to validate the proposed multi-modal defect detection approach for detection of GaN defects relevant to power electronic devices.
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Selim Elhadj, Jake Yoo, Ted Laurence, Qinghui Shao, Sonny Ly, Lars Voss, and Matthias Daemeur "Rapid non-destructive detection of defects in bulk and epitaxially grown GaN", Proc. SPIE 11514, Laser-induced Damage in Optical Materials 2020, 115140M (11 September 2020); https://doi.org/10.1117/12.2571660
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