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14 September 2020 Simulation of laser-induced damage of semiconductors by ultrashort mid-infrared laser pulses
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Abstract
Low energy of the photons of intense mid-infrared lasers favors generation of highly non-equilibrium free-carrier (FC) plasmas with high ponedromotive energy of conduction-band electrons. The plasmas are characterized by enlarged electron-phonon collision time, low free-carrier absorption, and extended lifetime of plasma’s non-equilibrium states in contrary to near-infrared and visible wavelengths. We propose a model that incorporates an energy-resolved rate equation for the laser-generated conduction-band electron density, the Keldysh photoionization, the Vinogradov free-carrier absorption, and the low-collision-rate model of transient optical response. We discuss proper criteria to evaluate threshold of laser-induced damage by applying the model to typical semiconductors.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitaly E. Gruzdev, Olga Sergaeva, and Enam Chowhury "Simulation of laser-induced damage of semiconductors by ultrashort mid-infrared laser pulses", Proc. SPIE 11514, Laser-induced Damage in Optical Materials 2020, 115140R (14 September 2020); https://doi.org/10.1117/12.2572273
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