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11 September 2020 The effect of low temperature annealing on the UV, ns laser damage performance of hafnia single layers
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Abstract
We compare the 355 nm, 45º AOI p-pol 8 n-s laser damage performance of standing-wave hafnia single layers fabricated under the same conditions and annealed under different temperatures. An intriguing trend is observed in the laser damage performance with respect to annealing temperature, with a notable performance increase observed in the sample annealed at 250º C. Chemical compositional analysis via Rutherford Backscatter spectroscopy (RBS) indicates that annealing induces sub-stoichiometric hafnia films for high temperature annealing.
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Colin Harthcock, Roger Qiu, Raluca Negres, Gabe Guss, Gourav Bhowmik, and Mengbing Huang "The effect of low temperature annealing on the UV, ns laser damage performance of hafnia single layers", Proc. SPIE 11514, Laser-induced Damage in Optical Materials 2020, 1151410 (11 September 2020); https://doi.org/10.1117/12.2572175
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