0.33 NA EUV systems for High Volume Manufacturing

Eric Verhoeven; Ron Schuurhuis; Marcel Mastenbroek; Peter Jonkers; Frank Bornebroek; Arthur Minnaert; Harrie van Dijck; Parham Yaghoobi; Geert Fisser; Payam Tayebati; Martijn Leenders; Roderik van Es

doi:10.1117/12.2572356

22 September 2020 0.33 NA EUV systems for High Volume Manufacturing

Eric Verhoeven, Ron Schuurhuis, Marcel Mastenbroek, Peter Jonkers, Frank Bornebroek, Arthur Minnaert, Harrie van Dijck, Parham Yaghoobi, Geert Fisser, Payam Tayebati, Martijn Leenders, Roderik van Es

Author Affiliations +

Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 1151703 (2020) https://doi.org/10.1117/12.2572356
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

In 2019 we have seen the first 7 nm logic devices, manufactured on ASML NXE:3400 scanners, hitting the market. In this paper we will give an update on the performance improvements to further optimize these systems for High Volume Manufacturing (HVM), related to the lithographic performance, productivity and uptime. We will also demonstrate that for the 5 nm logic node and 10nm-class DRAM, excellent overlay, focus, and critical dimension (CD) control have been realized. In combination with intrinsic tool stability and holistic control schemes, including (resist and tool) performance improvements addressing stochastics issues, this provides the required performance for HVM for these nodes. Finally we will discuss the ASML roadmap for meeting the requirements for the 3 nm node and beyond.

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Eric Verhoeven, Ron Schuurhuis, Marcel Mastenbroek, Peter Jonkers, Frank Bornebroek, Arthur Minnaert, Harrie van Dijck, Parham Yaghoobi, Geert Fisser, Payam Tayebati, Martijn Leenders, and Roderik van Es "0.33 NA EUV systems for High Volume Manufacturing", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151703 (22 September 2020); https://doi.org/10.1117/12.2572356

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