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20 September 2020 High sensitivity non-CAR type hemicellulose resists for EUV Lithography
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Abstract
This paper described a higher sensitivity non-CAR type hemicellulose resist and the effect of hemicellulose content and polymer structure for EUV lithography. Hemicellulose content and the resist structure are the keys of EUV sensitivity. The line width 14 nm L/S pattern by EUV lithography was successfully obtained. Other 2types of resist were developed for higher sensitivity of EUV lithography. The results will be reported and confirmed the effect of hemicellulose content and resist structure. Non-CAR type hemicellulose resist is one of the candidates for next generation EUV lithography resist.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuyo Morita, Kimiko Yamamoto, Yasuaki Tanaka, Hiroki Tanaka, Masahiko Harumoto, Yuji Tanaka, Chisayo Mori, You Arisawa, Tomohiro Motono, Harold Stokes, and Masaya Asai "High sensitivity non-CAR type hemicellulose resists for EUV Lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170E (20 September 2020); https://doi.org/10.1117/12.2572769
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