Translator Disclaimer
Presentation
20 September 2020 Characterizing Variation in EUV Contact Hole Lithography
Author Affiliations +
Abstract
Local critical dimension uniformity (LCDU) for contact holes may be correlated with stochastic defects (missing or merged holes), but metrology noise will bias the LCDU measured by a CD-SEM. In this work, large contact hole data sets will be collected with varying SEM measurement recipes, such as different numbers of frames of averaging. Additionally, multiple measurements of the same after-etch features will be used to quantify the impact of metrology noise on the biasing of measured LCDU. Finally, a recommendation will be made as to an approach that minimizes, or eliminates, bias in LCDU measurements.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Gian Lorusso, Danilo De Simone, and Joren Severi "Characterizing Variation in EUV Contact Hole Lithography", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170K (20 September 2020); https://doi.org/10.1117/12.2572834
PROCEEDINGS
PRESENTATION


SHARE
Advertisement
Advertisement
Back to Top