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20 September 2020 Improvement of EUV processes for high volume manufacturing
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EUV (extreme ultraviolet) lithography has recently begun to be applied to semiconductor mass production, and it is expected that more layers will be applied in the future. In particular, the adoption of EUV is a great advantage in that the number of masks required for ArF immersion lithography can be reduced, which can reduce not only the cost but also the risk of EPE (edge placement error) due to superposition. However, the pattern defects of EUV lithography is still issue, and its high resolution performance has not been fully exploited. In order to further pattern shrink of semiconductors in the future, a major issue is how to reduce these defects. In this report, we introduce the latest approach for mitigation the defects of EUV lithography patterns. The defects are confirmed not only ADI (after development inspection) but also AEI (after etch inspection).
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Muramatsu, Hiroki Tadatomo, Tomoya Onitsuka, Keisuke Yoshida, Arnaud Dauendorffer, Takahiro Shiozawa, Soichiro Okada, Shinichiro Kawakami, and Satoru Shimura "Improvement of EUV processes for high volume manufacturing", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 115170M (20 September 2020);

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