Experimental verification of high-NA imaging simulations using SHARP

Natalia Davydova; Fei Liu; Markus Benk; Eelco van Setten; Gerardo Bottiglieri; Anton van Oosten; John McNamara; Vincent Wiaux; Joern-Holger Franke; Kenneth Goldberg; DS Nam; Joseph Zekry; Patrick Naulleau; Timon Fliervoet; Rene Carpaij

doi:10.1117/12.2572846

16 October 2020 Experimental verification of high-NA imaging simulations using SHARP

Natalia Davydova, Fei Liu, Markus Benk, Eelco van Setten, Gerardo Bottiglieri, Anton van Oosten, John McNamara, Vincent Wiaux, Joern-Holger Franke, Kenneth Goldberg, DS Nam, Joseph Zekry, Patrick Naulleau, Timon Fliervoet, Rene Carpaij

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Proceedings Volume 11517, Extreme Ultraviolet Lithography 2020; 1151714 (2020) https://doi.org/10.1117/12.2572846
Event: SPIE Photomask Technology + EUV Lithography, 2020, Online Only

Abstract

The next-generation high-NA EUV scanner is being developed to enable patterning beyond the 3-nm technology node. Design and development of the scanner are based on rigorous litho-simulations. It is important to verify key imaging simulation findings by means of aerial image experiments with representative high-NA scanner characteristics. The first ASML-SHARP joint experiment was done with lines and spaces with pitches down to 16 nm wafer scale (1x). The experimental results confirmed the key litho-simulation findings: central obscuration’s impact on high-NA imaging and mitigations of obscuration’s impact using flex illuminations.

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Natalia Davydova, Fei Liu, Markus Benk, Eelco van Setten, Gerardo Bottiglieri, Anton van Oosten, John McNamara, Vincent Wiaux, Joern-Holger Franke, Kenneth Goldberg, DS Nam, Joseph Zekry, Patrick Naulleau, Timon Fliervoet, and Rene Carpaij "Experimental verification of high-NA imaging simulations using SHARP", Proc. SPIE 11517, Extreme Ultraviolet Lithography 2020, 1151714 (16 October 2020); https://doi.org/10.1117/12.2572846

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