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20 September 2020 EUV phase shift mask requirements for imaging at low-k1
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Abstract
To enable failure-free process windows with EUV lithography a sufficiently high optical contrast is required. For decreasing pitch the contrast requirements may only be achieved with advanced masks such as, high-k and attenuated PSM. While manufacturing high-k absorbers requires effort, the imaging theory is straightforward. Studies to the PSM have shown even better image contrast, at the cost of increased complexity of the imaging theory. The strong presence of M3D effects with EUV drives the attenuated PSM imaging physics in a different direction than for DUV. We report on the investigation of the expected requirements and capabilities of the PSM
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank J. Timmermans, Claire van Lare, Jo Finders, and Robert de Kruif "EUV phase shift mask requirements for imaging at low-k1", Proc. SPIE 11518, Photomask Technology 2020, 1151807 (20 September 2020); https://doi.org/10.1117/12.2572355
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