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5 November 2020 Lateral mode tailoring in broad area diode lasers based on laterally coupled passive waveguide
Jingjing Yang, Jie Fan, Jun Qi, Yonggang Zou, Xiaohui Ma
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Proceedings Volume 11562, AOPC 2020: Advanced Laser Technology and Application; 1156210 (2020) https://doi.org/10.1117/12.2580063
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China
Abstract
In this paper, the lateral single-mode emission from 1064nm edge-emitting (broad area) BA diode lasers with laterally coupled passive waveguide (LCPW) structures is presented. The LCPW structure is introduced to both sides of the broad active waveguide, and the high-order lateral modes can be tunneled into the LCPW, which results in an increase in higher-order lateral modes loss and an increase in the 2D optical confinement factor difference between fundamental lateral mode and higher-order lateral modes, thereby suppressing the higher-order lateral modes. The influence of LCPW structure on the suppression of higher order lateral modes in broad area lasers are investigated. The results show that for the semiconductor laser with active waveguide width of 15μm, the introduction of LCPW structure effectively eliminates the high-order lateral modes and achieves a single lateral mode output.
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Jingjing Yang, Jie Fan, Jun Qi, Yonggang Zou, and Xiaohui Ma "Lateral mode tailoring in broad area diode lasers based on laterally coupled passive waveguide", Proc. SPIE 11562, AOPC 2020: Advanced Laser Technology and Application, 1156210 (5 November 2020); https://doi.org/10.1117/12.2580063
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KEYWORDS
Waveguides
Semiconductor lasers
Near field
Broad area laser diodes
Waveguide modes
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