Translator Disclaimer
5 November 2020 High power Al-free CW 808nm laser diode bar
Author Affiliations +
Proceedings Volume 11562, AOPC 2020: Advanced Laser Technology and Application; 115621C (2020)
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China
808nm laser is widely used in solid-state laser pump source, information technology, military field, like laser weapon. The main problem of high power CW laser is the high working temperature caused by low photoelectric efficiency. There are two ideas to solve this problem: one is optimizing the package structure, to make huge energy be eliminated by water or others; the other is optimizing the structure of chip, to improve the photoelectric conversion efficiency, minimize the voltage and reduce the heat producing finally. This article mainly concentrates on how to adjust the structure of active layer, waveguide layer and gradient layer. The target of those adjustments is producing 2mm and 3mm cavity length chip which can work at 210A and emit light more than 200W.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fan Yang, Gangming Liu, Cunxue Wu, and Zhiwan Yan "High power Al-free CW 808nm laser diode bar", Proc. SPIE 11562, AOPC 2020: Advanced Laser Technology and Application, 115621C (5 November 2020);


980-nm high-power semiconductor lasers
Proceedings of SPIE (October 19 2001)
High reliability, high power arrays of 808 nm single mode...
Proceedings of SPIE (January 29 2008)
High-power Al-free SCH-SQW lasers grown by LPE
Proceedings of SPIE (January 20 2005)
High-power high-efficiency laser diodes at JDSU
Proceedings of SPIE (February 07 2007)

Back to Top