Electrical performance improvement using nano-oxide thin films deposited via atomic layer deposition on microchannel plates

Qing Li; Tiezhu Bo; Chen Wang; Jiao Lian; Hua Cai; Xiaoxuan Shi; Hui Liu

doi:10.1117/12.2579643

5 November 2020 Electrical performance improvement using nano-oxide thin films deposited via atomic layer deposition on microchannel plates

Qing Li, Tiezhu Bo, Chen Wang, Jiao Lian, Hua Cai, Xiaoxuan Shi, Hui Liu

Author Affiliations +

Proceedings Volume 11567, AOPC 2020: Optical Sensing and Imaging Technology; 115671Z (2020) https://doi.org/10.1117/12.2579643
Event: Applied Optics and Photonics China (AOPC 2020), 2020, Beijing, China

Abstract

Microchannel plate (MCP) is two dimensional arrays of microscopic channel electron multipliers. In this study, oxide thin films such as zinc oxide doped with aluminum oxide (AZO) as conductive layer and aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via thermal atomic layer deposition (ALD). The bulk resistance of MCP in the suitable range (about 40~100 MΩ) was obtained by adjusting the percentage of zinc oxide (ZnO) cycles and the nano-oxide thin film thickness. As the tested voltage increased a behavior of negative temperature coefficient of the film was observed. After 5 days of continuous loading with 800 V bias, the resistance nearly doubled and stabilized. For the conduction mechanisms, the I-V curve obeys the ohmic law at low voltage region and the trap-controlled space-charge-limited conduction mechanisms as the applied voltage continue to increase. High gain performance (24000 @ 800 V) can be obtained by depositing only aluminum oxide film on traditional reduced lead glass microchannel plate. Meanwhile after the deposition of aluminum oxide film, the dark current density of the microchannel plate would increase to 1.8 picoampere in 15 minutes at DC 1000 V. Because of blocking effect the dark current density will drop to 0.03 picoampere in 50 minutes by depositing zinc oxide film with thickness of 4 nm before the SEE layer, and the resistance of MCP will reduce when the thickness of zinc oxide exceeds 4 nm.

Citation Download Citation

Qing Li, Tiezhu Bo, Chen Wang, Jiao Lian, Hua Cai, Xiaoxuan Shi, and Hui Liu "Electrical performance improvement using nano-oxide thin films deposited via atomic layer deposition on microchannel plates", Proc. SPIE 11567, AOPC 2020: Optical Sensing and Imaging Technology, 115671Z (5 November 2020); https://doi.org/10.1117/12.2579643

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available