8 January 1990 Room-Temperature InGaAs Detector Arrays For 2.5 µm
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Abstract
This paper describes new alloy heterojunction detectors of In.8Ga.2As/InAs.56p.4 which can detect light between 1.7 and 2.6 μm with 50% quantum efficiency and 5 mA/cm2 dark current (-1V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 μm diameter devices (spaced 400 um) could be made on a 25 x 30 mm wafer with overall yield above 93%. The ability to operate under -1V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. H. Olsen, A. M. Joshi, S. M. Mason, K. M. Woodruff, E. Mykietyn, V. S. Ban, M. J. Lange, J. Hladky, G. C. Erickson, G. A. Gasparian, "Room-Temperature InGaAs Detector Arrays For 2.5 µm", Proc. SPIE 1157, Infrared Technology XV, (8 January 1990); doi: 10.1117/12.978604; https://doi.org/10.1117/12.978604
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