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22 February 2021 Investigation into a prototype EUV attenuated phase-shift mask
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Abstract
Simulations on attenuated phase-shift masks (att PSM) for EUV have shown that these novel mask absorbers can strongly boost optical contrast. The optimum EUV imaging mask does not only need to balance the diffraction order amplitudes (as in DUV imaging), it also needs to mitigate the strong mask 3D effects that are present in EUV lithography. The latter is very important and strongly relies on material properties. Here, we present an overall progress update on our att PSM work, including the first experimental lithography results on an EUV att PSM test mask and guidelines needed for optimum performance from diffraction point of view.
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© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Claire van Lare, Frank Timmermans, Jo Finders, Olena Romanets, Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Takeshi Aizawa, and Takahiro Onoue "Investigation into a prototype EUV attenuated phase-shift mask", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116090A (22 February 2021); https://doi.org/10.1117/12.2584725
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